Formation Energy of Antisite Boron in GaAs

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概要

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• The concentration of antisite B and regular B atoms on Ga sites were measured by means of optical absorption in B-doped GaAs crystals quenched from various temperatures. The formation energy of an antisite B in GaAs was determined to be 1.7 eV.

• 社団法人応用物理学会の論文
• 1993-08-01

著者

• Suezawa Masashi

  Institute For Materials Research Tohoku University

• Sumino Koji

  Institute For Materials Reseach Tohoku University

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