Formation Energy of Antisite Boron in GaAs
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概要
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The concentration of antisite B and regular B atoms on Ga sites were measured by means of optical absorption in B-doped GaAs crystals quenched from various temperatures. The formation energy of an antisite B in GaAs was determined to be 1.7 eV.
- 社団法人応用物理学会の論文
- 1993-08-01
著者
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Suezawa Masashi
Institute For Materials Research Tohoku University
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Sumino Koji
Institute For Materials Reseach Tohoku University
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