Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen(Semiconductors)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-15
著者
-
Fukata N
Institute For Materials Research Tohoku University
-
Fukata N
Univ. Tsukuba Tsukuba Jpn
-
Fukata Naoki
Institute For Materials Research Tohoku University
-
SUEZAWA Masashi
Institute for Materials Research,Tohoku University
-
Suezawa Masashi
Institute For Materials Research Tohoku University
-
Suezawa M
Institute For Materials Research Tohoku University
-
NAKANISHI Akiko
Institute for Materials Research, Tohoku University
-
Nakanishi Akiko
Institute For Materials Research Tohoku University
関連論文
- Observation of Dipole-Forbidden Transitions througy Fano Antiresonance in Boron-Doped Silicon
- ESR Study on Local Structure of UV-Induced Midgap States in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4, en=ethylenediamine
- ESR Observation of the Motion of Optically Induced Paramagnetic Dimers in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4(en=ethylenediamine)
- Photodegradation of Polysilanes Studied by Far-Infrared Spectroscopy
- Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method
- Vacancy Formation Energy of Silicon Determined by a New Quenching Method : Semiconductors
- Three Different Forms of Hydrogen Molecules in Silicon
- Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen
- Properties of Platinum-Hydrogen Complexes in Silicon : an ESR Study : Semiconductors
- Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen(Semiconductors)
- ESR Spectra from Platinum-Hydrogen Pair in Silicon : Semiconductors
- Positron Annihilations Associated with Defects in Plastically Deformed Si
- Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in Si
- The Nature of Nitrogen-Oxygen Complexes in Silicon
- Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals
- H_2-related Defects in Si Quenched in H_2 Gas Studied by Optical Absorption Measurements
- Defects with Deep Levels in GaAs Induced by Plastic Deformation and Electron Irradiation : Semiconductors and Semiconductor Devices
- Hydrogen Molecules in Defective Silicon
- Formation of Hydrogen Molecules in n-Type Silicon
- Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon
- High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon
- Optical Properties of New Kinds of Thermal Donors in Silicon
- Isotope effect of penetration of hydrogen and deuterium into silicon through Si/SiO2 interface
- Complexes of Nitrogen and Point Defects in Silicon
- Iron Gettering Controlled by Size and Density of Oxygen Precipitates in Czochralski-Grown Silicon
- Iron Gettering Controlled by Size and Density of Oxygen Precipitates in CZ Silicon
- Properties of an Iron-Vacancy Pair in Silicon
- Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon
- Reply to "Comment on 'Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon"'"
- Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon" [J. Phys. Soc. Jpn. 75 (2006) 044602]
- Growth and Characterization of Bulk Si-Ge Single Crystals
- Strong Photoluminescence from the Reaction Product of Erbium and Oxygen on Silicon Crystal
- Formation Energy of Antisite Boron in GaAs
- Hydrogen-Point Defect Complexes in Electron-Irradiated C-Doped and High-Purity Si
- Electron Spin Resonance Study of Deformation-Induced Si-Kl Centers in Silicon
- Temperature Dependence of the Optical Absorption Peaks at around 1990 cm^ in Electron-irradiated Si doped with Hydrogen
- Electron Excitation Memory Induced by Light Irradiation of Hydrogenated Si Nanocrystals Embedded in SiO
- Self-Interstitial in Electron-Irradiated Si Detected by Optical Absorption Due to Hydrogen Bound to It
- On the Extended Point Defect Model in Si Crystals at High Temperature
- Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen