H_2-related Defects in Si Quenched in H_2 Gas Studied by Optical Absorption Measurements
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-05-01
著者
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SUEZAWA Masashi
Institute for Materials Research,Tohoku University
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Suezawa Masashi
Institute For Materials Research Tohoku University
関連論文
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- Photodegradation of Polysilanes Studied by Far-Infrared Spectroscopy
- Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method
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- Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen(Semiconductors)
- ESR Spectra from Platinum-Hydrogen Pair in Silicon : Semiconductors