Growth and Characterization of Bulk Si-Ge Single Crystals

概要

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Si-Ge single crystals, 7 mm in diameter and about 20 mm long with compositions ranging from 0 to 50 at.% Si were grown by the traveling solvent method. The compositions of the crystals were shown to be uniform parallel and perpendicular to the growth axis using EPMA measurement. Raman spectra indicated that the ratio of the numbers of Si-Ge and Ge-Ge bonds agreed with that expected for a random distribution of Si and Ge atoms. The band gap energy of the alloy increased linearly up to 15 at.% Si and increased gradually above 15 at.% Si. From photoluminescence measurements done under uniaxial stress along the<111>direction, it was shown that the dependence of excitonic no-phonon spectrum on the stress changed at about 15 at.% Si. These results indicated that the position of the conduction band minimum of Si-Ge alloy in the k-space changed at about 15 at.% Si.
社団法人応用物理学会の論文
1996-12-15