Observation of Dipole-Forbidden Transitions througy Fano Antiresonance in Boron-Doped Silicon

スポンサーリンク

概要

• 論文の詳細を見る

• Infrared absorption in boron-doped silicon has been investigated in the photonenergy range from 450to 1000 cm '. Below the continuous background absorptionby hole transition, a series of profound dips are observed for dipole-forbidden transi-lions of phonon and electronic states. These transitions become permitted throughconfiguration interaction with the electronic continuum of the hole state, leading to asharp antiresonance structure in the spectrum. This interpretation is confirmed by ourmeasurement of spectral dependences on acceptor concentration, donor compensa-tion and sample temperature.[Fano-resonance, electron-phonon interaction, boron in silicon, local lattice ][ vibration, optical phonon, acceptor level%

• 社団法人日本物理学会の論文
• 1988-11-15

著者

• Nishina Yuichiro

  Institute for Materials Research, Tohoku University

• Kasuya Atsuo

  Institute Of Materials Resesrch Tohoku University

• Kasuya Atsuo

  Institute For Materials Research Tohoku University

• SUEZAWA Masashi

  Institute for Materials Research,Tohoku University

• SUMINO Koju

  Institute for Materials Research,Tohoku University

• Suezawa Masashi

  Institute For Materials Research Tohoku University

• Nishina Yuichiro

  Institute For Materials Research (imr) Tohoku University

• Nishina Yuichiro

  Institute For Materials Research Tohoku University

• Sumino Koju

  Institute For Materials Research Tohoku University

• Kasuya Atsuo

  Institute For Iron Steel And Other Metals Tohoku University

関連論文

• Optical Investigation of the Magnetic Excitations in Two- Dimensional Triangular Lattice Antiferromagnets
• 23aYF-5 集合状態における単層カーボンナノチューブの電子構造のSTM/STSによる解析
• 26a-M-7 ナノチューブの共鳴ラマン散乱
• 31p-YX-9 ナノチューブの共鳴ラマン散乱
• Field Ion-Scanning Tunneling Microscopy of Metallofullerenes Adsorbed on the Si(100)2×1 Surface
• Field Ion-Scanning Tunneling Microscopy Study of C_ on the Si(100) Surface
• Field Ion-Scanning Tunneling Microscopy Study of C_60 on the Si(100) Surface
• 光エネルギー変換を目的としたストラティファイド薄膜の作製
• ストラティファイド半導体微粒子光触媒の構造と触媒反応機構
• 溶液析出法によるCds薄膜光触媒の調製と反応活性
• 31a-YX-8 カーボンナノチューブのFEMとFIM
• Zeeman Effect of R-Lines in Alexandrite under High Magnetic Fields
• Far-Infrared Absorption by Small Particles of YBa_2Cu_3O_
• Optical Emission Spectra during Carbon Nanotube Production by Arc Discharge in H_2, CH_4 or He Gas
• High Upcomversion Intensity of Er^ in a LaF_3 Thin Film on CaF_2 (111)Grown by the Molecular Beam Epitaxy Method
• Epitaxial Growth of Er^ -Doped CaF_2 by Molecular Beam Epitaxy
• Observation of Dipole-Forbidden Transitions througy Fano Antiresonance in Boron-Doped Silicon
• Rectangular Arrangement of Se-Ring Clusters on Graphite Surface and Their Structural Transformation
• An Interpretation of the Correlation Between the Intensity of Scanning Tunneling Microscopy (STM) Induced Light Emission and the Topographic Height for the Metal Particles
• High-Field Magneto-Luminescence in Cd_Mn_Se under High Pressures at 4.2 K
• C_ Grown on the Cu(111)1×1 Surface
• X-Ray Diffuse Scattering in [Pt (en)_2][PtCl_2(en)_2](CIO_4)_4
• Photoinduced Near-Infrared Absorption in an M-X Chain Complex [Pt(en)_2][Pt(en)_2Cl_2](ClO_4)_4, en = ethylenediamine
• Photoluminescence of R-Lines in Alexandrite under High Magnetic Field and High Pressure(Magnetooptics)
• Pressure-Induced Paschen-Back Effect of R-Lines in Alexandrite under High Magnetic Field
• ESR Study on Local Structure of UV-Induced Midgap States in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4, en=ethylenediamine
• Raman Scattering by Ethylenediamines in Quasi-One-Dimensional Mixed-Valence Complexes [M (en)_2][Pt (en)_2Cl_2](ClO_4)_4(M=Pt,Pd,en=ethylenediamine)
• ESR Observation of the Motion of Optically Induced Paramagnetic Dimers in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4(en=ethylenediamine)
• Photodegradation of Polysilanes Studied by Far-Infrared Spectroscopy
• 金属イオンドープ型ZnO光触媒の調製とそれを用いた光エネサギー変換
• A New Emission Spectrum of Au_2 in the Gas Evaporation Technique: 761-809 nm
• Field Emission Patterns from Single-Walled Carbon Nanotubes
• Magnetic Properties of Iron in Nanocapsules
• Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method
• Vacancy Formation Energy of Silicon Determined by a New Quenching Method : Semiconductors
• The Growth Mechanism of SiC Film on a Si (111)-(7×7) Surface by C_ Precursor Studied by Photoelectron Spectroscopy
• The Quality of SiC Film Formed by Thermal Reaction of C_ Monolayer on Si(111)-(7×7) Surface(STM-C_)
• B-4 ナノチューブの臨界張力の測定(分科B:「実験開発」)
• ZnO, ZnS 光触媒薄膜の調製とその触媒特性
• 水熱処理法を用いた多層ナノチューブの精製
• 新しいプロセスによるストラティファイド半導体微粒子の調製とその光触媒特性
• 25aF-12 水素ガス中アーク放電によるナノグラファイバーの成長と構造
• 半導体クラスターのサイズ制御法
• 31a-YX-7 二元金属触媒を用いたアーク放電法による単層ナノチューブの多量合成II
• 7a-PS-51 金2原子分子からの発光分析:760-800nm
• Luminescences of Pyrene Single Crystal and Pyrene Molecules Inserted in a Molecular Vessel of Cyclodextrin(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Coupling Between Electrons and Molecular Vibrations of an Anthracene Single Molecule in a Cyclodextrin(Atomic and Molecular Physics)
• Electronic States of SnBr_4 Single Crystal and of Its Clusters Inserted in the Molecular Vessel of Cyclodextrin
• Electronic States of SnBr_4 Single Crystal and of Its Clusters Inserted in the Molecular Vessel of Cyclodextrin
• New Reconstructions of Platinum Silicide Surface (Special Issue: Scanning Tunneling Microscopy/Spectroscopy and Related Techniques)
• Vibrational Modes of C_ Fullerene on Si(111)7×7 Surface : Estimation of Charge Transfer from Silicon Dangling Bonds to C_ Molecules
• Vibrational Modes of C_ Fullerene Adsorbed on Si(100)2×1 Surface Studied by High-Resolution Electron-Energy-Loss Spectroscopy
• Resonant Electronic Raman Scattering and Electronic Structures of Bound Exciton Complex in ZnSe
• Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen
• Properties of Platinum-Hydrogen Complexes in Silicon : an ESR Study : Semiconductors
• Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen(Semiconductors)
• ESR Spectra from Platinum-Hydrogen Pair in Silicon : Semiconductors
• Positron Annihilations Associated with Defects in Plastically Deformed Si
• Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in Si
• The Nature of Nitrogen-Oxygen Complexes in Silicon
• H_2-related Defects in Si Quenched in H_2 Gas Studied by Optical Absorption Measurements
• Defects with Deep Levels in GaAs Induced by Plastic Deformation and Electron Irradiation : Semiconductors and Semiconductor Devices
• Study of the Exciton State by Magneto-Raman Scattering in HgI_2
• Site-Dependent ^O Substitution in YBa_2Cu_3O_7 Studied by Raman Scattering Measurements
• Systematic Raman Scattering Study on Substitutional Effects in Solid Solution Systems of Ln_Ba_Cu_3O_y (Ln=Eu, Sm and La)
• Raman Scattering Study of the Effect of Nd Substitution into Ba Sites on the Phonon Spectrum of Nd_Ba_Cu_3O_y (x=0-0.4, y=〜7)
• In-Situ Raman Scattering Measurements of the Structural Phase Transition at Temperatures in High T_c-Oxide YBa_2Cu_3O_x : Electrical Properties of Condensed Matter
• High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon
• Optical Properties of New Kinds of Thermal Donors in Silicon
• Ferroelastic Multidomains in LaNbO_4 Crystals
• 昭和の物質科学と平成の物質科学(特別講演,第18回物理教育研究大会(仙台大会)の報告)
• 昭和の物質科学と平成の物質科学
• Complexes of Nitrogen and Point Defects in Silicon
• Scanning Tunneling Microscopy of C_ on the Si(111)7 × 7 Surface
• Iron Gettering Controlled by Size and Density of Oxygen Precipitates in Czochralski-Grown Silicon
• Iron Gettering Controlled by Size and Density of Oxygen Precipitates in CZ Silicon
• Properties of an Iron-Vacancy Pair in Silicon
• Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon
• Reply to "Comment on 'Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon"'"
• Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon" [J. Phys. Soc. Jpn. 75 (2006) 044602]
• Growth and Characterization of Bulk Si-Ge Single Crystals
• Strong Photoluminescence from the Reaction Product of Erbium and Oxygen on Silicon Crystal
• Formation Energy of Antisite Boron in GaAs
• Hydrogen-Point Defect Complexes in Electron-Irradiated C-Doped and High-Purity Si
• Electron Spin Resonance Study of Deformation-Induced Si-Kl Centers in Silicon
• Temperature Dependence of the Optical Absorption Peaks at around 1990 cm^ in Electron-irradiated Si doped with Hydrogen
• Self-Interstitial in Electron-Irradiated Si Detected by Optical Absorption Due to Hydrogen Bound to It
• On the Extended Point Defect Model in Si Crystals at High Temperature
• Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen

もっと見る 閉じる

スポンサーリンク