Strong Photoluminescence from the Reaction Product of Erbium and Oxygen on Silicon Crystal
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概要
- 論文の詳細を見る
Photoluminescence spectra around 1.5 μm from silicon (Si) doped with erbium (Er) by various methods have been studied. The doping methods that were adopted were annealing after painting of Er(NO_3)_3 solutions and evaporation of Er on Si surface, and annealing of specimens in the Er vapour. Strong photoluminescence similar to that of Er_2O_3 was observed only from the damaged surface of n-type Czochralski-grown Si when Er was doped with the last method. Analysis of the damaged surface by the method of electron spectroscopy for chemical analysis (ESCA) showed that Er_2O_3 was generated on the surface of n-type Cz.Si.
- 社団法人応用物理学会の論文
- 1994-12-15
著者
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Suezawa Masashi
Institute For Materials Research Tohoku University
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Sumino Koji
Institute For Materials Reseach Tohoku University
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SUEZAWA Masashi
Institute for Materials Research, Tohoku University
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