Generation Kinetics of EL2 Centers in GaAs : Condensed Matter
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概要
- 論文の詳細を見る
The generation kinetics of EL2 centers is investigated by means of the optical absorption at low temperature with GaAs in which grown-in EL2 centers have previously been eliminated by annealing at 1200℃. An analysis of the experimental results with chemical rate equations shows that an EL2 center consists of at least three defects of elementary type. The activation energy for the generation of EL2 centers is determined to be about 2.5 eV. The results favor the picture that the kernel of an EL2 center consists of one As_<Ga> antisite and two Ga vacancies.
- 社団法人応用物理学会の論文
- 1988-01-20
著者
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Sumino Koji
Institute For Materials Reseach Tohoku University
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SUEZAWA Masachi
Institute for Materials Reseach, Tohoku University
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Suezawa Masachi
Institute For Materials Reseach Tohoku University
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