Electron Spin Resonance Study of Deformation-Induced Si-Kl Centers in Silicon
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概要
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Properties of Si-K l centers induced in silicon crystals by plastic deformation are in-vestigated by means of electron spin resonance (ESR). A Si-Kl center is found to beESR-active in its electrically neutral state. Some fraction of Si-Kl centers act asdonors in p-type Si and as acceptors in n-type Si while the other remain to be neutral.This fact is interpreted with an idea that deformation induces a variety of electricallyactive centers including Si-Kl centers in a silicon crystal and electrostatic interactionbetween a Kl center and other centers affects the occupation of the Kl center by anelectron or by a hole. The response of the ESR absorption to light illumination showsa transient behavior with respect to the illumination time. The electronic energy levelsof a Si-Kl center in its charged and neutral states rtre determined from the analysis ofphoto-ESR data.ESR, Si-Kl, photo-ESR, dislocation, energy level, optical transition
- 社団法人日本物理学会の論文
- 1989-07-15
著者
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Suezawa Masashi
Institute For Materials Research Tohoku University
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SUMINO Koji
Institute for Materials Research,Tohoku University
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Sumino Koji
Institute For Materials Research Tohoku University
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Sumino Koji
Institute For Materials Reseach Tohoku University
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