High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-09-15

著者

• SUEZAWA Masashi

  Institute for Materials Research,Tohoku University

• Suezawa Masashi

  Institute For Materials Research Tohoku University

• MCHEDLIDZE Teimuraz

  Institute for Materials Research, Tohoku University

• Mchedlidze Teimuraz

  Institute For Materials Research Tohoku University

• KAMINSKI Pawel

  Institute of Electronic Materials Technology

• KOZLOWSKI Roman

  Institute of Electronic Materials Technology

• JELENSKI Andrzej

  Institute of Electronic Materials Technology

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