High Purity Semi-Insulating 4H-SiC Epitaxial layers by Defect-Competition Epitaxy : Controlling Si Vacancies
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概要
- 論文の詳細を見る
- 2012-02-25
著者
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KOZLOWSKI Roman
Institute of Electronic Materials Technology
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Chowdhury Iftekhar
University Of Chittagong
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Klein P.
Naval Research Laboratory
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CHANDRASHEKHAR M.
University of South Carolina, Electrical Engineering
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KAMINSKI Pavel
Institute of Electronic Materials Technology
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SUDARSHAN Tangali
University of South Carolina, Electrical Engineering
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Chandrashekhar M.
University Of South Carolina Electrical Engineering
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Chowdhury Iftekhar
University Of South Carolina Electrical Engineering
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Sudarshan Tangali
University Of South Carolina Electrical Engineering
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