Iron Gettering Controlled by Size and Density of Oxygen Precipitates in CZ Silicon

スポンサーリンク

概要

論文の詳細を見る
1997-09-16

著者

関連論文

Observation of Dipole-Forbidden Transitions througy Fano Antiresonance in Boron-Doped Silicon
ESR Study on Local Structure of UV-Induced Midgap States in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4, en=ethylenediamine
ESR Observation of the Motion of Optically Induced Paramagnetic Dimers in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4(en=ethylenediamine)
Photodegradation of Polysilanes Studied by Far-Infrared Spectroscopy
Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method
Vacancy Formation Energy of Silicon Determined by a New Quenching Method : Semiconductors
Properties of Platinum-Hydrogen Complexes in Silicon : an ESR Study : Semiconductors
Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen(Semiconductors)
ESR Spectra from Platinum-Hydrogen Pair in Silicon : Semiconductors
Positron Annihilations Associated with Defects in Plastically Deformed Si
Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in Si
The Nature of Nitrogen-Oxygen Complexes in Silicon
H_2-related Defects in Si Quenched in H_2 Gas Studied by Optical Absorption Measurements
Defects with Deep Levels in GaAs Induced by Plastic Deformation and Electron Irradiation : Semiconductors and Semiconductor Devices
High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon
Optical Properties of New Kinds of Thermal Donors in Silicon
Complexes of Nitrogen and Point Defects in Silicon
Iron Gettering Controlled by Size and Density of Oxygen Precipitates in Czochralski-Grown Silicon
Iron Gettering Controlled by Size and Density of Oxygen Precipitates in CZ Silicon
Properties of an Iron-Vacancy Pair in Silicon
Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon
Reply to "Comment on 'Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon"'"
Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon" [J. Phys. Soc. Jpn. 75 (2006) 044602]
Growth and Characterization of Bulk Si-Ge Single Crystals
Strong Photoluminescence from the Reaction Product of Erbium and Oxygen on Silicon Crystal
Formation Energy of Antisite Boron in GaAs
Hydrogen-Point Defect Complexes in Electron-Irradiated C-Doped and High-Purity Si
Electron Spin Resonance Study of Deformation-Induced Si-Kl Centers in Silicon
Temperature Dependence of the Optical Absorption Peaks at around 1990 cm^ in Electron-irradiated Si doped with Hydrogen
Self-Interstitial in Electron-Irradiated Si Detected by Optical Absorption Due to Hydrogen Bound to It
On the Extended Point Defect Model in Si Crystals at High Temperature
Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen

もっと見る

スポンサーリンク