Self-Interstitial in Electron-Irradiated Si Detected by Optical Absorption Due to Hydrogen Bound to It
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概要
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We studied the interaction between hydrogen and point defects generated by electron inradiation of Si by means of optical absorption measurement. Specimens were prepared from n-type Si crystals. Those specimens were doped with hydrogen by annealing in a hydrogen atmosphere at 1200℃ followed by quenching and were subsequently irradiated with 3 MV electrons at room temperature. We observed their optical absorption spectra at about 6 K with a resolution of 0.25 cm^<-1>. Many optical absorption peaks were observed in electron-irradiated specimens. Most of those peaks disappeared at around 300℃ due to isochronal annealing. On the other hand, new optical absorption lines appeared at 2223 cm^<-1> and 2166 cm^<-1> after annealing at high temperature, namely above l50℃. The former is known to be due to a complex of one self-interstitial atom and 4 hydrogen atoms. We propose that the 2166 cm^<-1> peak is due to a complex of one self-interstitial atom and three hydrogen atoms. These results clearly show that complexes of self-interstitials exist after electron-irradiation of Si and they dissociate above 150℃.
- 社団法人応用物理学会の論文
- 1998-07-01
著者
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Suezawa Masashi
Institute For Materials Research Tohoku University
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SUEZAWA Masashi
Institute for Materials Research, Tohoku University
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