On the Extended Point Defect Model in Si Crystals at High Temperature
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概要
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We herein discuss Seeger and Chik's model of extended point defects in Si crystals at high temperature based on our experimental results on the diffusion constant of vacancies at high temperature and the vacancy formation energy. We also show that the application of the extended model to the recombination of a vacancy and an interstitial is unsuitable, by pointing out the error in the interpretation of experimental results.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2008-09-25
著者
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Suezawa Masashi
Institute For Materials Research Tohoku University
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Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Yonenaga Ichiro
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Suezawa Masashi
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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