Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
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概要
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In molecular-beam epitaxy, isoelectronic Te doping induces the serious change of the physical properties of ZnO films: i) Incorporated Te concentration is proportional to the 2.2th power of injected Te flux in the logarithmic scale; ii) Te-doped ZnO lattices are dominated by the relaxation mechanism of compressive strain; iii) incorporated Te atoms substitute to the O sites of ZnO lattices; iv) the low-level injection of Te atoms below {\sim}10^{19} cm<sup>-3</sup>improves the crystalline quality in the ZnO films; and v) isoelectronic Te centers act as donor impurities, resulting in the increase of electrons in the ZnO films.
- 2013-05-25
著者
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Yao Takafumi
Center For Interdisciplinary Research Tohoku University
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Minegishi Tsutomu
Center For Interdisciplinary Research Tohoku University
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Oh Dong-cheol
Center For Optoelectronic Materials And Devices Department Of Defense Science And Technology Hoseo University
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Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Taishi Toshinori
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Park Seung-Hwan
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Kim Dong-Jin
Center for Optoelectronic Materials and Devices, Department of Defense Science and Technology, Hoseo University, Asan 336-795, Korea
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Chang Ji-Ho
Department of Semiconductor Physics, Korea Maritime University, Busan 606-791, Korea
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