Photoelectrochemical Properties of Single Crystalline and Polycrystalline GaN Grown by the Na-flux Method
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概要
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A single crystal and polycrystals of GaN grown by the Na-flux method were photoelectrochemically characterized. The flatband potential of the GaN single crystal was approximately 0.2 V anodic of the potential of the GaN layer grown by metal-organic vapor phase epitaxy. Clear photo-electrochemical response was observed for the GaN single crystal. The turn-on slopes of the photocurrent for the poly-crystalline samples were gentler than the slope for the single crystal. The turn-on slopes were probably affected by the high resistivity of grain boundaries in the polycrystalline samples.
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著者
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YAMANE Hisanori
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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Yao Takafumi
Center For Interdisciplinary Research Tohoku University
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Minegishi Tsutomu
Center For Interdisciplinary Research Tohoku University
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Yamane Hisanori
Institute For Materials Research Tohoku University
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YAMADA Takahiro
Institute of Multidisciplinary for Advanced Materials, Tohoku University
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KATO Takashi
Center for Interdisciplinary Research, Tohoku University
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FUJII Katsushi
Center for Interdisciplinary Research, Tohoku University
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MINEGISHI Tsutomu
Center for Interdisciplinary Research, Tohoku University
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