Nearly 4-Inch-Diameter Free-Standing GaN Wafer Fabricated by Hydride Vapor Phase Epitaxy with Pit-Inducing Buffer Layer
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概要
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A free-standing GaN wafer was fabricated by depositing a GaN buffer that induced the formation of pits (hereafter, pit-inducing GaN buffer) on a low-temperature-grown GaN buffer on the sapphire substrate. A high-temperature-grown GaN layer was grown on the pit-inducing GaN buffer that induced the formation of pits on the high-temperature-grown GaN layer. The pit-inducing buffer suppresses crack formation in the thick GaN film thereby releasing growth stress. Thermal stress in GaN on a sapphire system is also discussed on the basis of calculations utilizing a bilayer model. We have succeeded in the fabrication of a nearly 4-in.-diameter free-standing GaN thick wafer with a pit-inducing GaN buffer by one-stop hydride vapor phase epitaxy, which will lead to a low-cost fabrication of free-standing GaN wafers.
- 2013-08-25
著者
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GOTO Takenari
Center for Interdisciplinary Research, Tohoku University
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Yao Takafumi
Center For Interdisciplinary Research Tohoku University
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Seto Ritsu
Tsukuba R&D Center, AETech Corporation, Tsuchiura, Ibaraki 300-0847, Japan
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Sato Tadashige
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Okano Shinya
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Sato Akira
Tsukuba R&D Center, AETech Corporation, Tsuchiura, Ibaraki 300-0847, Japan
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Goto Hideki
Tsukuba R&D Center, AETech Corporation, Tsuchiura, Ibaraki 300-0847, Japan
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Goto Hideki
Tsukuba R&D Center, AETech Corporation, Tsuchiura, Ibaraki 300-0847, Japan
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