Lattice Deformation in a-Plane ZnO Films Grown on r-Plane Al2O3 Substrates Grown by Plasma-Assisted Molecular-Beam Epitaxy
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概要
- 論文の詳細を見る
The lattice deformation of a-ZnO films on r-plane Al2O3 substrates, grown by plasma-assisted molecular-beam epitaxy (PAMBE), is strongly dependent on growth temperature: i) the unit cell volume is smaller than that of a reference ZnO bulk and it increases with the increase in growth temperature; ii) a-plane lattice constants decrease and c-plane lattice constants increase with the increase in growth temperature; and iii) residual strain decreases with the increase in growth temperature, irrespective of the direction of a-, m-, and c-axes. It is proposed that the ZnO lattices in the a-ZnO/r-Al2O3 system are individually relaxed along in-plane axes by releasing the residual strain in terms of compensating thermal mismatch.
- 2012-08-25
著者
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Yao Takafumi
Center For Interdisciplinary Research Tohoku University
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Oh Dong-cheol
Center For Optoelectronic Materials And Devices Department Of Defense Science And Technology Hoseo University
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HAN Seok-Kyu
Department of Advanced Materials Engineering, Chungnam National University
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Han Seok-Kyu
Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Korea
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HONG Soon-Ku
Department of Advanced Materials Engineering, Chungnam National University
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Oh Dong-Cheol
Center for Optoelectronic Materials and Devices, Department of Defense Science and Technology, Hoseo University, Asan, Chungnam 336-795, Korea
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SONG Jung-Hoon
Department of Physics, Kongju National University
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Inaba Katsuhiko
X-ray Research Lab., Rigaku Corp., 3-9-12 Matsubara-cho, Akishima, Tokyo 196-8666, Japan
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Inaba Katsuhiko
X-ray Research Laboratory, Rigaku Corporation, Akishima, Tokyo 196-8666, Japan
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