Ammonothermal Epitaxy of Thick GaN Film Using NH4Cl Mineralizer
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概要
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Single-crystalline GaN films of ${\leq} 110$ μm in thickness have been fabricated on hydride vapor phase-grown (0001) GaN substrates by employing a relatively low-pressure ($\leq 170$ MPa) ammonothermal growth method with NH4Cl as mineralizer. Metallic Ga and polycrystalline GaN has been the chosen precursor. An average growth speed on the $(000\bar{1})$ face of the substrate of ${\geq}5$ μm/day was observed when using metallic Ga and about 7 μm/day for GaN. The maximum growth speed of 27.5 μm/day was achieved for the film grown at a supersaturation from a combined Ga/GaN precursor. The surface morphology is not affected by the nature of the precursor.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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Kagamitani Yuji
Institute Of Multidisciplinary Research For Advanced Materials (imram) Tohoku University
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Yoshikawa Akira
Institute For Materials Research
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Inaba Katsuhiko
X-ray Research Laboratory Rigaku Corporation
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Fukuda Tsuguo
Institute For Material Research Tohoku University
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Ehrentraut Dirk
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Hoshino Naruhiro
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Kawabata Shinichiro
Mitsubishi Chemical Corp., 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
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Kagamitani Yuji
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Kagamitani Yuji
Institute for Materials Research
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Inaba Katsuhiko
X-ray Research Lab., Rigaku Corp., 3-9-12 Matsubara-cho, Akishima, Tokyo 196-8666, Japan
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