Comprehensive Study about the Effect of Heat Treatment on the Electrical Properties of Single-Crystalline ZnO Materials

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概要

• 論文の詳細を見る

著者

• Yao Takafumi

  Center For Interdisciplinary Research Tohoku University

• Ko Hang-ju

  Photovoltaic And Optoelectronic Device Center Korea Photonics Technology Institute

• Oh Dong-cheol

  Center For Optoelectronic Materials And Devices Department Of Defense Science And Technology Hoseo University

• Jeong Weon-guk

  School Of Advanced Materials Science And Engineering Sungkyunkwan University

• HAN Seok-Kyu

  Department of Advanced Materials Engineering, Chungnam National University

• HONG Soon-Ku

  Department of Advanced Materials Engineering, Chungnam National University

関連論文

• Electronic Structure Characteristics of MBE (molecular beam epitaxy)-Grown Diluted Magnetic Semiconductor Ga_Cr_xN Films
• Effect of hydrogen irradiation during growth on molecular beam epitaxy of ZnO
• Effects of ZnO/MgO Double Buffer Layers on Structural Quality and Electron Mobility of ZnO Epitaxial Films Grown on c-Plane Sapphire
• High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates
• Fabrication of well-aligned ZnO nanorods using periodically polarity-inverted templates for photonic devices (特集 化合物半導体ナノ作製技術の新展開)
• Time Dependence of the Growth Morphology of GaN Single Crystals Prepared in a Na–Ga Melt
• Dynamic Characteristics of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistor Devices and Circuits Fabricated with Asymmetric Precrystallization
• Catalyst-Free Growth of Vertically Aligned ZnO Nanostructures Arrays on Periodically Polarity-Inverted Substrate
• Comprehensive Study about the Effect of Heat Treatment on the Electrical Properties of Single-Crystalline ZnO Materials
• Lattice Deformation in a-Plane ZnO Films Grown on r-Plane Al2O3 Substrates Grown by Plasma-Assisted Molecular-Beam Epitaxy
• Comprehensive Study about the Effect of Heat Treatment on the Electrical Properties of Single-Crystalline ZnO Materials
• Lattice Deformation in a-Plane ZnO Films Grown on r-Plane Al_2O_3 Substrates Grown by Plasma-Assisted Molecular-Beam Epitaxy
• Photoelectrochemical Properties of Nonpolar and Semipolar GaN
• Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
• Nearly 4-Inch-Diameter Free-Standing GaN Wafer Fabricated by Hydride Vapor Phase Epitaxy with Pit-Inducing Buffer Layer
• Formation and Evolution of Misoriented Grains in α-Plane Oriented Gallium Nitride Layers
• Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
• Photoelectrochemical Properties of Single Crystalline and Polycrystalline GaN Grown by the Na-flux Method

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