Seeded Growth of GaN Single Crystals by Na Flux Method Using Na Vapor
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概要
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The seeded growth of GaN single crystals was performed at 780 °C and a N2 pressure of 5 MPa by the Na flux method using Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na–Ga melt. The thickness of the crystals grown on the seeds by heating for 400 h was approximately 150 μm in the directions perpendicular to the prismatic and pyramidal planes, implying a growth rate of at least 0.4 μm/h.
- Japan Society of Applied Physicsの論文
- 2006-09-25
著者
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Yamane Hisanori
Institute For Materials Research Tohoku University
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YAMADA Takahiro
Institute of Multidisciplinary for Advanced Materials, Tohoku University
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