Influence of 3d-Transition-Metal Additives on Single Crystal Growth of GaN by the Na Flux Method

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概要

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• The influence of 3d-transition-metal additives (Cr, Mn, Fe, Co and Ni) on crystal growth of GaN at 750–850°C by the Na flux method was investigated. In the case of Cr addition, CrN single crystals were deposited and no significant difference in the crystal growth of GaN was found. In the case of Mn addition, growth of GaN single crystals in the $-c$ direction was enhanced and prismatic crystals were obtained. Mn of 0.10–0.35 at.% was contained in GaN crystals. The Mn-doped GaN crystals were red or orange in color and showed Curie-like paramagnetism. Fe, Co and Ni additives also enhanced the growth of prismatic crystals. These transition-metal elements as well as Cr were not detected in the GaN crystals by inductively coupled plasma (ICP) atomic emission spectroscopy. Colorless transparent prismatic crystals having 1.5 mm length were prepared using the Ni additive.

• 2003-09-15

著者

• SARAYAMA Seiji

  Department 1, R & D Center, Research and Development Group, Ricoh Company, Ltd.

• Iwata Hirokazu

  Department 1 R & D Center Research And Development Group Ricoh Company Ltd.

• Disalvo Francis

  Department Of Chemistry And Chemical Biology Cornell University

• Aoki Masato

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Yamane Hisanori

  Institute For Materials Research Tohoku University

• Shimada Masahiko

  Institute For Advanced Materials Processing Tohoku University

• Aoki Masato

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• DiSalvo Francis

  Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA

• Iwata Hirokazu

  Department 1, R & D Center, Research and Development Group, Ricoh Company, Ltd., 5-10 Yokarakami, Kumanodo, Takadate, Natori 981-1241, Japan

• Yamane Hisanori

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Shimada Masahiko

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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