BN容器中におけるNa-Ga融液からのGaNの結晶成長

概要

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A melt of Na and Ga with various Ga contents was placed in a BN crucible and reacted at 650℃ for 300 h with N_2 generated from the decomposition of NaN_3 in a sealed stainless-steel tube. At 0.25 and 0.45 Ga molar fractions (r_<Ga>=Ga/(Ga+Na)), GaN precipitated at the interface of the melt and gas phases, and on the wall and bottom of the crucible. Platelet single crystals with a maximum size of 2 mm grew at the inside of the interface layer. The precipitates on the wall and bottom consisted of hexagonal columnar crystals elongated along the c-axis direction. The size of these crystals was about 10-20 μm at r_<Ga>=0.25 and 50-100 μm at r_<Ga>=0.45. The morphology of the precipitates observed by scanning electron microscopy suggested tthat the columnar GaN crystals grew from the metl phase. At r_<Ga>=0.65 and 0.85, thin GaN microcrystalline layers partially covered the Na-Ga melt surface, but the formation of bulk GaN was not observed in the BN crucible.
社団法人日本セラミックス協会の論文
1999-10-01