Dissolution and Recrystallization of GaN in Molten Na
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概要
- 論文の詳細を見る
The dissolution mass of GaN in molten Na at 650–800°C and 3–5 MPa of N2 was determined by weight loss of polycrystalline GaN fragments immersed in Na and by chemical analysis of the amount of Ga dissolved in Na. The dissolution of GaN in Na was equilibrated within 100 h and the dissolution mass increased with increasing temperature but decreased with increasing N2 pressure. It was found that the addition of a small amount of Li3N into the Na melt increased the dissolution mass of GaN. Transparent platelet single crystals of GaN with sizes over 300 μm were grown from nutrient GaN powder by cooling a Na solution with a Li3N additives from 800°C to 700°C at 1°C/h.
- 2003-12-15
著者
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SARAYAMA Seiji
Department 1, R & D Center, Research and Development Group, Ricoh Company, Ltd.
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Iwata Hirokazu
Department 1 R & D Center Research And Development Group Ricoh Company Ltd.
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Disalvo Francis
Department Of Chemistry And Chemical Biology Cornell University
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Aoki Masato
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Yamane Hisanori
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
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Shimada Masahiko
Institute For Advanced Materials Processing Tohoku University
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Yamane Hisanori
Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, Japan
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