Europium-Doped Gallium Nitride Prepared by Na Flux Method
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-02-25
著者
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Yamada Takahiro
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Yamane Hisanori
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
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NANBU Hiroshi
Center for Interdisciplinary Research, Tohoku University
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KOHIRO Kenji
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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TSUCHIA Yoshihiko
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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Kohiro Kenji
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Tsuchia Yoshihiko
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Nanbu Hiroshi
Center For Interdisciplinary Research Tohoku University
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YAMADA Takahiro
Institute of Multidisciplinary for Advanced Materials, Tohoku University
関連論文
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- Europium-Doped Gallium Nitride Prepared by Na Flux Method
- Photoelectrochemical Properties of Single Crystalline and Polycrystalline GaN Grown by the Na-flux Method
- Seeded Growth of GaN Single Crystals by Na Flux Method Using Na Vapor