Taishi Toshinori | Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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概要
- Taishi Toshinoriの詳細を見る
- 同名の論文著者
- Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japanの論文著者
関連著者
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Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Taishi Toshinori
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Yao Takafumi
Center For Interdisciplinary Research Tohoku University
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Minegishi Tsutomu
Center For Interdisciplinary Research Tohoku University
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Yonenaga Ichiro
Institute For Materials Research Tohoku University
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Taishi Toshinori
Institute For Materials Research Tohoku University
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Oh Dong-cheol
Center For Optoelectronic Materials And Devices Department Of Defense Science And Technology Hoseo University
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Park Seung-Hwan
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Kim Dong-Jin
Center for Optoelectronic Materials and Devices, Department of Defense Science and Technology, Hoseo University, Asan 336-795, Korea
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Chang Ji-Ho
Department of Semiconductor Physics, Korea Maritime University, Busan 606-791, Korea
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YAO Takafumi
Center for Interdisciplinary Research, Tohoku University
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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YONENAGA Ichiro
Institute for Materials Research, Tohoku University
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Lee Hyunjae
Center For Interdisciplinary Research Tohoku University
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Park Seunghwan
Center For Interdisciplinary Research Tohoku University
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Jung Mina
Department Of Nano-semiconductor Engineering National Korea Maritime University
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Minegishi Tsutomu
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Oh Dongcheol
Center for Optoelectronic Materials and Devices, Department of Defense Science and Technology, Hoseo
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Taishi Toshinori
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Park Jinsub
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Chang Jiho
Department of nano-semiconductor Engineering, National Korea Maritime University, Busan 606-791, Kor
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Im Inho
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Ha Junseok
Faculty of Applied Chemical Engineering, Chonnam National University, Kwangju 500-757, Korea
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Hong Soonku
Department of Nano Information Systems Engineering, Chungnam National University, Daejeon 305-764, K
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Hoshikawa Keigo
Faculty Of Education Shinshu University
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Chang Jiho
Department Of Nano-semiconductor Engineering National Korea Maritime University
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Im Inho
Center For Interdisciplinary Research Tohoku University
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Ha Junseok
Faculty Of Applied Chemical Engineering Chonnam National University
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Hong Soonku
Department Of Nano Information Systems Engineering Chungnam National University
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Park Jinsub
Center For Interdisciplinary Research Tohoku University
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Oh Dongcheol
Center For Optoelectronic Materials And Devices Department Of Defense Science And Technology Hoseo U
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Minegishi Tsutomu
Department Of Chemical System Engineering The University Of Tokyo
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Uda Satoshi
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hoshikawa Takeshi
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hoshikawa Keigo
Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Yao Takafumi
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Chang Jiho
Department of Applied Science, National Korea Maritime University, Busan 606-791, Republic of Korea
著作論文
- High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates
- Temperature Dependences of Acceptor Concentration, Conductivity Mobility, and Resistivity of Ga-Doped Czochralski-Si Crystals
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy