Temperature Dependences of Acceptor Concentration, Conductivity Mobility, and Resistivity of Ga-Doped Czochralski-Si Crystals
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概要
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The temperature dependences of acceptor concentration $n_{\text{A}}$, conductivity mobility $\mu_{\text{C}}$, and resistivity $\rho$ of gallium (Ga)-doped Czochralski (CZ)-silicon (Si) crystals were studied in the temperature range from 220 to 360 K ($-53$ to 87 °C). Crystals with Ga concentration $N_{\text{A}}$ from $6.1 \times 10^{14}$ to $2.0 \times 10^{18}$ atoms/cm3 were analyzed by Hall-effect measurements using the van der Pauw method in the temperature range from 80 to 360 K. The temperature dependences of $n_{\text{A}}$ and $\rho$ of crystals with less than $10^{16}$ atoms/cm3 showed the same trends as those of B-doped p-type Si crystals, while those of crystals with more than $10^{16}$ atoms/cm3 differed from those of B-doped crystals, mainly because the temperature dependence of $n_{\text{A}}$ is not in the saturation range and the degree of ionization $n_{\text{A}}/N_{\text{A}}$ decreases with decreasing temperature from 360 to 220 K.
- 2009-03-25
著者
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Yonenaga Ichiro
Institute For Materials Research Tohoku University
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Hoshikawa Keigo
Faculty Of Education Shinshu University
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Taishi Toshinori
Institute For Materials Research Tohoku University
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Uda Satoshi
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hoshikawa Takeshi
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hoshikawa Keigo
Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Taishi Toshinori
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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