Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation
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概要
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We observed the annihilation of boron–hydrogen (BH) pairs and gallium–hydrogen (GaH) pairs during electron irradiation of Si crystals. BH and GaH pairs were generated by annealing of specimens co-doped with B or Ga and H. They were then irradiated with 3 MV electrons at room temperature. Intensities of optical absorption peaks due to BH and GaH pairs were observed at about 7 K. BH pairs and GaH pairs were found to decrease in one stage and two stages, respectively, with the increase of irradiation dose. These decreases were interpreted to be due to interactions between those pairs and self-interstitials.
- 2006-12-15
著者
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Kasuya Atsuo
Center For Interdisciplinary Research Tohoku University
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Usami Noritaka
Institute For Material Research Tohoku University
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Kojima Ken-ichi
Graduate School Of Integrated Science Yokohama City University
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Suezawa Masashi
Graduate School Of Integrated Science Yokohama City University
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Yonenaga Ichiro
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Yonenaga Ichiro
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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KASUYA Atsuo
Center for Interdisciplinary Research and Graduate School of Engineering, Tohoku University
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