Preparation of an Ultraclean and Atomically Controlled Hydrogen-Terminated Si(111)-($1{\times} 1$) Surface Revealed by High Resolution Electron Energy Loss Spectroscopy, Atomic Force Microscopy, and Scanning Tunneling Microscopy: Aqueous NH4F Etching Proc
スポンサーリンク
概要
- 論文の詳細を見る
We propose an improved wet chemical process for preparing a high-quality hydrogen-terminated Si(111)-($1{\times} 1$) surface and show an atomically ordered and ultraclean surface without carbon and oxygen contamination. The vibrational properties and surface morphology are investigated by high-resolution electron energy loss spectroscopy (HREELS), atomic force microscopy (AFM), and scanning tunneling microscopy (STM). The HREELS spectra and images of AFM and STM reveal the precise aqueous NH4F etching process of Si(111) and indicate the high controllability of steps and terraces at the atomic scale. The surface cleanliness and morphology strongly depend on the etching time. At the etching time of 10 min, we obtain an ultraclean and atomically ordered surface with wide terraces of $36\pm 7$ nm step distance. It is confirmed by AFM and STM that 1.0% ammonium sulfite is useful for removing dissolved oxygen in the 40% NH4F etching solution and for preparing a high-quality H:Si(111)-($1{\times} 1$) surface with a low density of etch pits. The onset of tunneling current and the gap of 1.39 eV are measured by scanning tunneling spectroscopy. There is no peak at $-1.3$ eV in comparison with the previous report [Phys. Rev. Lett. 65 (1990) 1917].
- 2007-09-15
著者
-
Kasuya Atsuo
Center For Interdisciplinary Research Tohoku University
-
Suto Shozo
Department Of Physics Faculty Of Science Tohoku University
-
Sazaki Gen
Institute For Materials Research (imr) Tohoku University
-
Nakajima Kazuo
Institute For Materials Research (imr) Tohoku University
-
Nishikata Susumu
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
-
KATO Hiroki
Department of Applied Chemistry, Faculty of Science, Science University of Tokyo
-
Sazaki Gen
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
-
Yamada Taro
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
-
Taoka Takumi
Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
-
Czajka Ryszard
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
-
Wawro Andrzej
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
-
Kato Hiroki
Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
-
Nakajima Kazuo
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
-
Nakajima Kazuo
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
-
KASUYA Atsuo
Center for Interdisciplinary Research and Graduate School of Engineering, Tohoku University
関連論文
- Extreme eosinophilia caused by interleukin-5-producing disseminated colon cancer
- Growth mechanisms of protein crystals at high supersaturation
- DEFECT GENERATION DURING CRYSTAL GROWTH OF LYSOZYME
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- Evaluation of Carcinoembryonic Antigen mRNA in Living, Necrotic, and Apoptotic Gastric Cancer Cells by Reverse Transcriptase-Polymerase Chain Reaction
- Significance of Apoptosis Induced by Tumor Necrosis Factor-α and/or Interferon-γ Against Human Gastric Cancer Cell Lines and the Role of the p53 Gene
- 胃癌細胞株におけるp53発現と抗癌剤(5FU+CDDP)及びサイトカイン(TNFα+IFNγ)によるアポトーシス誘導の特徴-マイクロアレイでの検討-
- Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
- Hardness and Oxidation Resistance of Perovskite-type Solid Solution of the ScRh_3B-ScRh_3C System
- Crystal Growth and Properties of AlLiB_ : Magnetism
- REMn_2Si_2 (RE=Y, Tb, Dy, Ho) Single Crystals Grown from Lead Flux and Magnetic Properties : Magnetism
- Boron-Carbon Atomic Ratio Dependence on the Hardness and Oxidation Resistance of Solid Solutions of Perovskite-Type Borocarbide YRh_3B_xC_ (O ≦ x ≦ 1)
- R-Dependency of the Hardness Of Perovskite-Type RRh_3B Compounds (R = La, Gd, Lu and Sc) : Structure and Mechanical and Thermal Properties of Condensed Matter
- Pioglitazone Reduces the Necrotic-Core Component in Coronary Plaque in Association With Enhanced Plasma Adiponectin in Patients With Type 2 Diabetes Mellitus(Ischemic Heart Disease)
- Crossed cerebellar diaschisis : a positron emission tomography study with L-[methyl-^C]methionine and 2-deoxy-2-[^F]fluoro-D-glucose
- Elastic Properties of NaCl:OH at Low Temperatures
- Oropharyngeal Cancer : Clinical Efficacy of Ultrasound
- Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
- Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
- Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
- Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
- In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- Reversible Morphological Changes Induced by the Photodimerization of Bis (4-Octadecyloxystilbazolium) Isophthalate Films
- Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method
- Vacancy Formation Energy of Silicon Determined by a New Quenching Method : Semiconductors
- Vacancy Formation Energy at Metal-Silicon Interface Region
- The Growth Mechanism of SiC Film on a Si (111)-(7×7) Surface by C_ Precursor Studied by Photoelectron Spectroscopy
- The Quality of SiC Film Formed by Thermal Reaction of C_ Monolayer on Si(111)-(7×7) Surface(STM-C_)
- K-means clustering and classification of medical images based on regions-of-interest
- Classification of Cirrhotic Liver in MRI Images Using Texture Features
- Luminescences of Pyrene Single Crystal and Pyrene Molecules Inserted in a Molecular Vessel of Cyclodextrin(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Coupling Between Electrons and Molecular Vibrations of an Anthracene Single Molecule in a Cyclodextrin(Atomic and Molecular Physics)
- Electronic States of SnBr_4 Single Crystal and of Its Clusters Inserted in the Molecular Vessel of Cyclodextrin
- Electronic States of SnBr_4 Single Crystal and of Its Clusters Inserted in the Molecular Vessel of Cyclodextrin
- Magnetic Damping of the Temperature-Driven Convection in NaCl Aqueous Solution Using a Static and Homogeneous Field of 10 T
- Vibrational Modes of C_ Fullerene on Si(111)7×7 Surface : Estimation of Charge Transfer from Silicon Dangling Bonds to C_ Molecules
- Vibrational Modes of C_ Fullerene Adsorbed on Si(100)2×1 Surface Studied by High-Resolution Electron-Energy-Loss Spectroscopy
- Hemodynamic Influences of Azelnidipine, a Novel Calcium Channel Blocker, on Cerebral Circulation in Hypertensive Patients with Ischemic White Matter Lesions
- Inhibition of Akt (ser473) Phosphorylation and Rapamycin-Resistant Cell Growth by Knockdown of Mammalian Target of Rapamycin with Small Interfering RNA in Vascular Endothelial Growth Factor Receptor-1-Targeting Vector
- Topography Dependence of Tunneling-Induced Fluorescence from Porphyrin Film
- Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
- Intracranial Bullet Retained since the Sino-Japanese War Manifesting as Hallucination : Case Report
- Proximal Aortic Replacement with Ascending-Descending Bypass for a Diffuse Aneurysm : Report of a Case
- The Relationship between the Reaction Conditions and the Nature of the Zn-bearing Ferrite Produced at Ambient Temperature
- A method for characterizing carbon nanotubes
- Origin of the Blue Shift in Ultraviolet Absorption Spectra of Nanocrystalline CeO_ Particles
- Infrared Absorption of OH^- in NaCl Crystal
- Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
- Exciton Dynamics of Poly(di-n-hexylsilane) Film
- Sex differences in the chemical induction of micronuclei in the rat
- Production of WTC.ZI-zi Rat Congenic Strain and Its Pathological and Genetic Analyses
- Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
- Direct Silica-Coating of Quantum Dots
- Construction of a Wide Band Millimeter Wave Oscillator of the Ledatron
- A Millimeter Wave Spectrophotometry by a Wide Band Oscillator of the Ledatron
- Minimally invasive cardiac surgery for a young woman with Marfan syndrome and mitral regurgitation
- Atomic Force Microscopic Study of Subsurface Ordering and Structural Transforms in n-Alcohol on Mica and Graphite
- Millimeter Wave Absorption of OH^- in NaCl Crystal
- 19aD07 The first direct observation of the adsorption process of individual impurity molecules on a protein crystal surface by optical microscopy(NCCG-35)
- 2P-174 静磁場下における人口脂質膜のダイナミクスの光学顕微鏡観察(2)(生体膜・人工膜-ダイナミクス,第47回日本生物物理学会年会)
- 1P-227 DMPC膜及びDMPC/DHPC二成分系へのランタノイドイオンEu^の効果について(生体膜/人工膜・構造物性,第46回日本生物物理学会年会)
- Severe Aortic Insufficiency Due to a Huge Leaflet Perforation in Libman-Sacks Syndrome : Report of a Case
- The Millimeter Wave Absorption in the Paraelectric Defect System of NaCl: OH^- Measured by a Ledatron Oscillator
- Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
- Preparation of an Ultraclean and Atomically Controlled Hydrogen-Terminated Si(111)-($1{\times} 1$) Surface Revealed by High Resolution Electron Energy Loss Spectroscopy, Atomic Force Microscopy, and Scanning Tunneling Microscopy: Aqueous NH4F Etching Proc
- Equilibrium Phase Diagrams for Stranski-Krastanov Structure Mode of III-V Ternary Quantum Dots
- Search for Perovskite-Type New Boride in the Sc–Ni–B System
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Observation of Atomic Hydrogen Adsorption on the Cap of Carbon Nanotube by Field Emission Microscopy
- Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation
- Fast Boron Diffusion in Si Crystal under Electron Irradiation at Room Temperature Indicated by the Enhanced Formation of Boron-Hydrogen Pairs
- Intratumoral heterogeneity of F-18 FDG uptake differentiates between gastrointestinal stromal tumors and abdominal malignant lymphomas on PET/CT
- Effect of X-ray Irradiation on the Organic Superconductor \kappa-(BEDT-TTF)2Cu(NCS)2 Probed by 13C-NMR
- Simultaneous PET/MR body imaging in rats : initial experiences with an integrated PET/MRI scanner
- Coupling Between Electrons and Molecular Vibrations of an Anthracene Single Molecule in a Cyclodextrin(Atomic and Molecular Physics)
- Diffusion and Clustering of Ag Atoms on $\text{Si}(111)7 \times 7$ Surface
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- Realization of Bulk Multicrystalline Silicon with Controlled Grain Boundaries by Utilizing Spontaneous Modification of Grain Boundary Configuration
- High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
- Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
- Successful Growth of InxGa1-xAs ($x>0.18$) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- Narrow Diameter Distribution of Horizontally Aligned Single-Walled Carbon Nanotubes Grown Using Size-Controlled Gold Nanoparticles
- Case Reports of Unexpected Suicides in Patients within Six Months after Stroke
- Selective pontine hypoplasia : A possible common feature in 5p monosomy syndrome
- Enhancement of Boron Diffusion in Silicon by Continuous Wave CO2 Laser Irradiation
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Vacancy Formation Energy at Metal-Silicon Interface Region
- Electrochemical Investigations of Al-Carbon Hybrid Bipolar Plate Materials for Polymer Electrolyte Fuel Cells
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- Solution Synthesis of Nanocrystalline Core-shell Structured NiCo Particles.
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
- New Reconstructions of Platinum Silicide Surface