DEFECT GENERATION DURING CRYSTAL GROWTH OF LYSOZYME

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概要

• 論文の詳細を見る
• 2005-11-28

著者

• Dold Peter

  Graduate School Of Science Tohoku University

• TSUKAMOTO Katsuo

  Graduate School of Science, Tohoku University

• SAZAKI Gen

  Institute of Materials Science, Tohoku University

• DOLD Peter

  Grad. School of Science, Tohoku University

• PETROVA Elena

  Grad. School of Science, Tohoku University

• TSUKAMOTO Katsuo

  Grad. School of Science, Tohoku University

• Sazaki Gen

  Institute Of Materials Science Tohoku University

• Petrova Elena

  Grad. School Of Science Tohoku University

• Sazaki Gen

  Institute For Materials Research (imr) Tohoku University

関連論文

• Growth mechanisms of protein crystals at high supersaturation
• DEFECT GENERATION DURING CRYSTAL GROWTH OF LYSOZYME
• High-Temperature Solution Growth and Characterization of Chromium Disilicide
• Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
• Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
• Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
• Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
• In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
• Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
• High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
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• Preparation of an Ultraclean and Atomically Controlled Hydrogen-Terminated Si(111)-($1{\times} 1$) Surface Revealed by High Resolution Electron Energy Loss Spectroscopy, Atomic Force Microscopy, and Scanning Tunneling Microscopy: Aqueous NH4F Etching Proc
• High-Temperature Solution Growth and Characterization of Chromium Disilicide
• High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
• Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
• Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate

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