Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
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概要
- 論文の詳細を見る
We report on the fabrication of a homogeneous SiGe-on-insulator as a substrate for strained Si-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistors. The fabrication process includes the growth of a thin Ge film on a commercially available SOI substrate at 100°C using a molecular beam epitaxy system, the formation of a SiO2 cap layer by radio-frequency sputtering, and rapid thermal annealing (RTA) in an Ar atmosphere. After RTA at an appropriate temperature, the SiGe-on-insulator with a laterally homogeneous Si fraction was successfully obtained by the formation of epitaxial SiGe on a thin SOI as a seed and interdiffusion of Ge and Si atoms. However, inhomogeneous SiGe films were obtained when the annealing temperature was very high. The conditions for the realization of SiGe with a homogeneous Si fraction were found to be closely related to the phase diagram of the Si–Ge binary alloy.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-01
著者
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Usami Noritaka
Institute For Material Research Tohoku University
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Segawa Yusaburo
Photodynamics Research Center Frontier Research Program The Institute Of Physical And Chemical Resea
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Fujiwara Kozo
Institute For Materials Research (imr) Tohoku University
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Zhang Baoping
Photodynamics Research Center The Institute Of Physical And Chemical Research (riken)
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Ujihara Toru
Institute For Materials Research (imr) Tohoku University
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Sazaki Gen
Institute For Materials Research (imr) Tohoku University
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Kutsukake Kentaro
Institute For Materials Research (imr) Tohoku University
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Nakajima Kazuo
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
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Ujihara Toru
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Segawa Yusaburo
Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aramaki Aza Aoba, Aoba-ku, Sendai 980-0845, Japan
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Zhang Baoping
Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aramaki Aza Aoba, Aoba-ku, Sendai 980-0845, Japan
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