Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature

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概要

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• We attempted to grow orthorhombic BaSi2 epitaxial films having preferential in-plane crystallographic orientation on both exact and vicinal Si(001) substrates with a miscut angle of 2° toward Si[\bar{1}10] by reactive deposition epitaxy (RDE) and subsequent molecular beam epitaxy (MBE). On the vicinal Si(001) substrate, the initial BaSi2 nuclei formed by RDE tended to grow unidirectionally with the [010] direction parallel to Si[110] when the annealing temperature of the Si substrate before the growth was increased from 830 to 1000 °C. Transmission electron microscopy showed that the grain size of the BaSi2 films grown by MBE increased up to approximately 9 μm on the vicinal Si(001) substrate when the substrate annealing temperature was 1000 °C. This is the largest grain size ever obtained for BaSi2. Even in the case of the exact Si(001) substrate, the MBE-grown BaSi2 grains preferentially grew with the [010] direction along Si[110] when the annealing temperature was 1000 °C.

• 2012-09-25

著者

• Usami Noritaka

  Institute For Material Research Tohoku University

• Toh Katsuaki

  Institute Of Applied Physics University Of Tsukuba

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Toh Katsuaki

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Hara Kosuke

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Saito Noriyuki

  Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan

• Yoshizawa Noriko

  Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan

• Toko Kaoru

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• Suemasu Takashi

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

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