Determination of Bulk Minority-Carrier Lifetime in BaSi

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概要

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• We have successfully determined the bulk minority-carrier lifetime in BaSi<inf>2</inf>epitaxial films by utilizing a drastic enhancement of lifetime by post-growth annealing at 800 °C, which is attributed to strain relaxation. From the film-thickness dependence of lifetime, we reveal that the bulk lifetime is 14 μs, which is long enough for thin-film solar cell applications. In addition, the sum of surface and interface recombination velocities is found to be as low as 8.3 cm/s presumably due to the ionic nature of BaSi<inf>2</inf>. This confirms that BaSi<inf>2</inf>is promising as an absorption-layer material for earth-abundant thin-film solar cells.

• 2013-11-25

著者

• Toko Kaoru

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Suemasu Takashi

  Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan

• Nakamura Kotaro

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Baba Masakazu

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Usami Noritaka

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Hara Kosuke

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Takabe Ryouta

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

関連論文

• Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
• Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films
• Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate (Special Issue : Photovoltaic Science and Engineering)
• Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)
• Negative Anisotropic Magnetoresistance in \gamma'-Fe4N Epitaxial Films on SrTiO3(001) Grown by Molecular Beam Epitaxy
• Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
• Determination of Bulk Minority-Carrier Lifetime in BaSi
• Determination of Bulk Minority-Carrier Lifetime in BaSi₂ Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

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