Nakamura Kotaro | Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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概要
- Nakamura Kotaroの詳細を見る
- 同名の論文著者
- Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japanの論文著者
関連著者
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Toko Kaoru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Nakamura Kotaro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Baba Masakazu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Suemasu Takashi
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan
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Usami Noritaka
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Hara Kosuke
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Takabe Ryouta
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Usami Noritaka
Institute For Material Research Tohoku University
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Khan M.
Institute Of Applied Physics University Of Tsukuba
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Saito Noriyuki
Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan
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Yoshizawa Noriko
Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Du Weijie
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Koike Shintaro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Suemasu Takashi
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0076, Japan
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Khan M.
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
著作論文
- Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)
- Determination of Bulk Minority-Carrier Lifetime in BaSi
- Determination of Bulk Minority-Carrier Lifetime in BaSi₂ Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing