Determination of Bulk Minority-Carrier Lifetime in BaSi₂ Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
スポンサーリンク
概要
著者
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Toko Kaoru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Suemasu Takashi
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan
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Nakamura Kotaro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Baba Masakazu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Suemasu Takashi
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0076, Japan
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Usami Noritaka
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Hara Kosuke
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Takabe Ryouta
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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- Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
- Determination of Bulk Minority-Carrier Lifetime in BaSi
- Determination of Bulk Minority-Carrier Lifetime in BaSi₂ Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing