Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN
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概要
- 論文の詳細を見る
The superiority of AlN as an intermediate layer during heteroepitaxy of GaN on GaAs substrates is demonstrated on the basis of growth rates, surface reactivity and crystallography.Although GaN growth on GaAs using monomethyl-hydrazine(MMHy)as a nitrogen source shows a long lag time to start growth, this lag time disappears upon the insertion of an AIN intermediate layer.Based on mass spectrometric analysis, these growth behaviors are attributed to the decomposition of MMHy which is enhanced by the Al sourse injection onto GaAs surfaces.The growth mechanism is explained within a framework of simple bond behavior.Further, it is confirmed by pole figure X-ray diffraction observations that a single phase hexagonal GaN layer is grown on GaAs(111)B substrates when the AlN intermediate layer is inserted, while a cubic phase is included in the GaN grown directly on the GaAs(111)B surface.
- 社団法人応用物理学会の論文
- 2000-08-15
著者
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Sasaki Masahiro
Institute Of Applied Physics University Of Tsukuba
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Shimoyama Norio
Tri Chemical Laboratory Inc.
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Shimoyama Norio
Tri Chemical Laboratories Inc.
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NAKAYAMA Tomoo
Institute of Applied Physics, University of Tsukuba
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Nakayama Tomoo
Institute Of Applied Physics University Of Tsukuba
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Sasaki Masahiro
Institute Of Applied Physics And Center For Tsukuba Advanced Research Alliance University Of Tsukuba
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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Sasaki Masahiro
Institute of Applied Physics and Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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