Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl_3
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概要
- 論文の詳細を見る
Effects of hydrogen on chloride atomic layer epitaxy (ALE) of GaAs using GaCl_3 were studied using He carrier gas and solid arsenic. It was found that some gallium chloride complexes adsorb on the GaAs surface even during H_2 purging, and the desorption of Cl atoms only occurs when arsenic is supplied as AsH_3 or arsenic vapor with H_2. However, since partial pressure of GaCl_3 is quite different in ordinary chloride ALE, those results may not be directly applied to ordinary chloride ALE using GaCl.
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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KOBAYASHI RYUJI
Institute of Health Sciences, Faculty of Medicine, Hiroshima University
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Kobayashi Ryuji
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Narahara Satoru
Institute Of Materials Science University Of Tsukuba
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ISHIKAWA Katsumi
Institute of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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