Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament
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概要
- 論文の詳細を見る
It was found that GaAs was etched effectively by atomic hydrogen generated by a tungsten (W) filament. The experiment was performed in a pure H_2 gas or H_2 and He gas mixture at atmospheric pressure. The W-filament was heated up to 2000℃. The GaAs was etched with a smooth surface in pure H_2 gas and the etching rate was as high as 15μm/h at a substrate temperature of 850℃, though the etching rate was low and the surface was rough with Ga droplets in He gas. These results suggest that Ga is removed from the GaAs surface as a hydride such as GaH_3.
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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KOBAYASHI RYUJI
Institute of Health Sciences, Faculty of Medicine, Hiroshima University
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Kobayashi Ryuji
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Fujii Kunihiro
Institute of Materials Science, University of Tsukuba
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FUJII Kunihiro
Institute of Material Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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