Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl_3 and AsH_3 System : Condensed Matter
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概要
- 論文の詳細を見る
A thermodynamic analysis of the VPE growth of GaAs using GaCl_3 and AsH_3 is described. It is shown that most of the GaCl_3 converts to GaCl and HCl at about 650℃ and that the growth of GaAs is possible by the GaCl_3 and AsH_3 system without using a high temperature zone. The experimental features of the system can be explained well by equilibrium model.
- 社団法人応用物理学会の論文
- 1988-09-20
著者
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki H
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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HASEGAWA Fumio
Tohoku University of Art and Design
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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