Growth and Thermodynamic Analysis of Atomic Layer Epitaxy of ZnS_xSe_<1-x>
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概要
- 論文の詳細を見る
ZnS_xSe_<1-x> epitaxial layers have been grown by atomic layer epitaxy (ALE) for the first time, using elemental Zn, H_2S and H_2Se as source materials at atmospheric pressure. The high-crystalline-quality layer is obtained at a sulfur content of about 6%, where the epitaxial layer is closely lattice-matched to the GaAs substrate. The vapor-solid distribution relationship for the group VI elements is experimentally obtained. A thermodynamic model is developed for the ALE growth of ZnS_xSe_<1-x> alloys. It is shown that the solid composition grown by atmospheric-pressure ALE is thermodynamically controlled.
- 社団法人応用物理学会の論文
- 1992-10-15
著者
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Ikeda H
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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IKEDA Hitoshi
Department of Pathology/Pathophysiology, Division of Pathophysiological Science, Hokkaido University
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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MIYAZAWA Takashi
Kanagawa Academy of Science and Technology
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Miyazawa Takayuki
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Seki H
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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IKEDA Hitoshi
Product Planning, Strategic Product Planning Department, Takeda Chemical Industries, Ltd.
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Ikeda Hitoshi
Product Planning Strategic Product Planning Department Takeda Chemical Industries Ltd.
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Ikeda Hitoshi
Department Of Clinical Laboratory Medicine The University Of Tokyo
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IKEDA Hitoshi
Department of Animal Physiology, Faculty of Agriculture, Nagoya University
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