Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction
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概要
- 論文の詳細を見る
The indium composition of the InGaN film increases with decreasing growth temperature; however, the crystalline quality of the film is poor when it is grown at low temperatures. To form a high-quality InGaN film with a large indium mole fraction, Nd: YAG pulse laser assisted metalorganic vapor phase epitaxy (MOVPE) was carried out at low temperatures. The results suggest that film quality can be improved by pulse laser irradiation on the surface of the film.
- Japan Society of Applied Physicsの論文
- 2004-08-01
著者
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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HIDA Ken-nosuke
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Kawaguchi Norihito
Technical Development And Engineering Center Ishikawajima-harima Heavy Industries Co. Ltd.
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Kumagai Yoshinao
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Koukitu Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Kangawa Yoshihiro
Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Kangawa Yoshihiro
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
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Kawaguchi Norihito
Technical Development and Engineering Center, Ishikawajima-Harima Heavy Industries Co., Ltd., Yokohama 235-8501, Japan
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Kumagai Yoshinao
Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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