Kumagai Yoshinao | Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T

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著作論文

Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
Halide Vapor Phase Epitaxy of Mg_xZn_O Layers on Zn-Polar ZnO Substrates
Theoretical Investigation of Arsenic Desorption from GaAs(001) Surfaces under an Atmosphere of Hydrogen
Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers
Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport
Solid Composition Control of MgxZn1-xO in Halide Vapor Phase Epitaxy
Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction
Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy
Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of InxGa1-xN Film and Input Mole Ratio during Molecular Beam Epitaxy
Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
Effect of High NH
High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H
High Temperature Ramping Rate for GaAs (111)A Substrate Covered with a Thin GaN Buffer Layer for Thick GaN Growth at 1000°C
Effect of High NH₃ Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates (Special Issue : Recent Advances in Nitride Semiconductors)
Structural and Optical Properties of Carbon-Doped AIN Substrates Grown by Hydride Vapor Phase Epitaxy Using AIN Substrates Prepared by Physical Vapor Transport

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