Dalmau Rafael | Hexatech Inc.
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概要
関連著者
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Nagashima Toru
Tsukuba Research Laboratories Tokuyama Corporation
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XIE Jinqiao
HexaTech, Inc.
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SITAR Zlatko
HexaTech, Inc.
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Sitar Zlatko
Hexatech Inc.
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Xie Jinqiao
Hexatech Inc.
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Moody Baxter
Hexatech Inc.
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Dalmau Rafael
Hexatech Inc.
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Schlesser Raoul
Hexatech Inc.
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Kinoshita Toru
Tsukuba Research Laboratories Tokuyama Corporation
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川添 良幸
東北大学金属材料研究所
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川添 良幸
東北大 金属材料研
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Murakami Hisashi
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Murakami Hisashi
Department Of Applied Chemistry Faculty Of Technoloty Tokyo University Of Agricultrue And Technoloty
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kangawa Yoshihiro
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Inoue Shin-ichiro
Department Of Applied Chemistry Graduate School Of Engineering Nagoya University
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Murakami H
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Kumagai Yoshinao
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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纐纈 明伯
東京農工大学大学院工学研究院応用化学部門
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Nagashima Toru
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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KUBOTA Yuki
Tsukuba Research Laboratories, Tokuyama Corporation
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KINOSHITA Toru
Tsukuba Research Laboratories, Tokuyama Corporation
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DALMAU Rafael
HexaTech, Inc.
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SCHLESSER Raoul
HexaTech, Inc.
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MOODY Baxter
HexaTech, Inc.
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Kubota Yuki
Tsukuba Research Laboratories Tokuyama Corporation
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HIRONAKA Keiichiro
Tsukuba Research Laboratories, Tokuyama Corporation
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OBATA Toshiyuki
Tsukuba Research Laboratories, Tokuyama Corporation
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KUMAGAI Yoshinao
Denartment of Applied Chemistry, Tokyo University of Agriculture and Technology
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KOUKITU Akinori
Denartment of Applied Chemistry, Tokyo University of Agriculture and Technology
著作論文
- Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport
- Deep-Ultraviolet Light-Emitting Diodes Fabricated on AIN Substrates Prepared by Hydride Vapor Phase Epitaxy