Deep-Ultraviolet Light-Emitting Diodes Fabricated on AIN Substrates Prepared by Hydride Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 2012-12-25
著者
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Inoue Shin-ichiro
Department Of Applied Chemistry Graduate School Of Engineering Nagoya University
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Nagashima Toru
Tsukuba Research Laboratories Tokuyama Corporation
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XIE Jinqiao
HexaTech, Inc.
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SITAR Zlatko
HexaTech, Inc.
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Sitar Zlatko
Hexatech Inc.
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Xie Jinqiao
Hexatech Inc.
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Moody Baxter
Hexatech Inc.
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Dalmau Rafael
Hexatech Inc.
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Schlesser Raoul
Hexatech Inc.
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Kinoshita Toru
Tsukuba Research Laboratories Tokuyama Corporation
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HIRONAKA Keiichiro
Tsukuba Research Laboratories, Tokuyama Corporation
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OBATA Toshiyuki
Tsukuba Research Laboratories, Tokuyama Corporation
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KUMAGAI Yoshinao
Denartment of Applied Chemistry, Tokyo University of Agriculture and Technology
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KOUKITU Akinori
Denartment of Applied Chemistry, Tokyo University of Agriculture and Technology
関連論文
- Biochemical Characterization of Plasma Membrane H^+-ATPase Activation in Guard Cell Protoplasts of Arabidopsis thaliana in Response to Blue Light
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- Spontaneous Alternating Copolymerization of 1-Silyloxy-1,3-dienes and Unsaturated Cyclic Anhydrides
- Spirocycle-Incorporated Triphenylamine Derivatives as an Advanced Organic Electroluminescent Material
- Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport
- Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport
- Deep-Ultraviolet Light-Emitting Diodes Fabricated on AIN Substrates Prepared by Hydride Vapor Phase Epitaxy
- Structural and Optical Properties of Carbon-Doped AIN Substrates Grown by Hydride Vapor Phase Epitaxy Using AIN Substrates Prepared by Physical Vapor Transport
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