Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

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概要

• 論文の詳細を見る

著者

• KUBOTA Yuki

  Tsukuba Research Laboratories, Tokuyama Corporation

• KINOSHITA Toru

  Tsukuba Research Laboratories, Tokuyama Corporation

• Kubota Yuki

  Tsukuba Research Laboratories Tokuyama Corporation

• Kinoshita Toru

  Tsukuba Research Laboratories Tokuyama Corporation

関連論文

• Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport
• Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport
• Deep-Ultraviolet Light-Emitting Diodes Fabricated on AIN Substrates Prepared by Hydride Vapor Phase Epitaxy
• Structural and Optical Properties of Carbon-Doped AIN Substrates Grown by Hydride Vapor Phase Epitaxy Using AIN Substrates Prepared by Physical Vapor Transport

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