Mayumi M | Itami Research Laboratories Sumitomo Electric Industries Ltd.
スポンサーリンク
概要
関連著者
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Kobayashi Y
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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KUMAGAI Yoshinao
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kumagai Y
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Mayumi Miho
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Mayumi M
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Kumagai Yoshinao
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Kobayashi Y
Tokai Univ. Kanagawa Jpn
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Kumagai Y
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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Kangawa Yoshihiro
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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MAYUMI Miho
Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technolo
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SATOH Fumitaka
Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technolo
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TAKEMOTO Kikurou
Itami Research Laboratories, Sumitomo Electric Industries Ltd.
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Satoh Fumitaka
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Takemoto Kikurou
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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川添 義幸
東北大金研
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川添 良幸
東北大 金属材料研
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Kobayashi Y
Ntt Basic Research Lab. Kanagawa
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Kasai Hitoshi
Semiconductor Division Sumitomo Electric Industries Ltd.
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TAKEMOTO Kikurou
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and
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SEKI Hisashi
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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MOTOKI Kensaku
Itami Research Laboratories, Sumitomo Electric Industries Ltd.
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OKAHISA Takuji
Itami Research Laboratories, Sumitomo Electric Industries Ltd.
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MATSUMOTO Naoki
Itami Research Laboratories, Sumitomo Electric Industries Ltd.
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MATSUSHIMA Masato
Itami Research Laboratories, Sumitomo Electric Industries Ltd.
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KIMURA Hiroya
Semiconductor Division, Sumitomo Electric Industries Ltd.
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UEMATSU Koji
Itami Research Laboratories, Sumitomo Electric Industries Ltd.
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HIRANO Tetsuya
Semiconductor Division, Sumitomo Electric Industries Ltd.
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NAKAYAMA Masahiro
Semiconductor Division, Sumitomo Electric Industries Ltd.
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NAKAHATA Seiji
Itami Research Laboratories, Sumitomo Electric Industries Ltd.
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UENO Masaki
Itami Research Laboratories, Sumitomo Electric Industries Ltd.
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HARA Daijirou
Itami Research Laboratories, Sumitomo Electric Industries Ltd.
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Seki H
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Uematsu Koji
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Hara Daijirou
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Kimura H
Semiconductor Division Sumitomo Electric Industries Ltd.
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Okahisa Takuji
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Nakahata Seiji
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Motoki Kensaku
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Ueno Masaki
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Matsushima Masato
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Matsumoto Naoki
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Nakayama Masahiro
Semiconductor Division Sumitomo Electric Industries Ltd.
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Hirano Tetsuya
Semiconductor Division Sumitomo Electric Industries Ltd.
著作論文
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface