High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H
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概要
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Orientation dependent decomposition of sapphire substrates and resultant AlN formation during heat treatment in an atmospheric-pressure mixed gas flow of H<inf>2</inf>and N<inf>2</inf>(\text{H_{2}/N_{2}}= 3/1) was investigated within the temperature range 980--1480 °C. AlN was formed on sapphire in the temperature range 1030--1430 °C for c-, a-, and m-plane sapphire, and 980--1430 °C for the r-plane sapphire. At 1480 °C, AlN was not formed, and only sapphire was decomposed by H<inf>2</inf>with the ranking of m- > r- > a- > c-plane. The ranking was contrary to that of the amount of AlN formation at 1380 °C, which occurred by the reaction of gaseous Al generated by the sapphire decomposition and N<inf>2</inf>. This discrepancy was due to the shape of AlN formed on sapphire; whisker-like AlN does not protect c- and a-plane sapphire from decomposing, while layer-like AlN protects r- and m-plane sapphire from decomposing.
- 2013-08-25
著者
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Murakami Hisashi
Department Of Applied Chemistry Faculty Of Technoloty Tokyo University Of Agricultrue And Technoloty
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kumagai Yoshinao
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Togashi Rie
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Togashi Rie
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Nomura Kazushiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Hanagata Shoko
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Kunisaki Atsushi
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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