27aB07 Growth of semi-insulating GaN layer with high Fe doping(NCCG-34)
スポンサーリンク
概要
- 論文の詳細を見る
Investigation of high Fe doping during GaN growth was performed for the fabrication of semi-insulating GaN wafer. It was found that the resistivity of the GaN layer increases with increasing the input partial pressure ratio of (C_5H_5)_2Fe/GaCl. The layer grown with input partial pressure ratio of (C_5H_5)_2Fe/GaCl=0.68 showed high resistivity.
- 日本結晶成長学会の論文
- 2004-08-25
著者
-
Murakami Hisashi
Department Of Applied Chemistry Faculty Of Technoloty Tokyo University Of Agricultrue And Technoloty
-
Murakami Hisashi
Department Of Applied Chemistry Tokyo University Of Agriculture & Technology
関連論文
- PE-406 Relation of Body Mass Index to the Recurrence of Atrial Fibrillation after Pulmonary Vein Isolation via Radio Frequency Catheter Ablation(Diabetes/Obesity/Metabolic syndrome(07)(H),Poster Session(English),The 72nd Annual Scientific Meeting of the J
- PE-574 Fenofibrate Increases Phosphorylation of AMP-activated Protein Kinase and Production of Nitric Oxide in Human Umbilical Vein Endothelial Cells(Endothelium-4 (H) PE99,Poster Session (English),The 70th Anniversary Annual Scientific Meeting of the Jap
- PE-442 Fenofibrate Increases Phosphorylation of AMP-activated Protein Kinase and Glucose Uptake in C2C12 Cells(Diabetes/Obesity/Metabolic syndrome-5 (H) PE74,Poster Session (English),The 70th Anniversary Annual Scientific Meeting of the Japanese Circulati
- PE-181 Cardiomyopathy with Myocardial Energy Depletion is Induced by Pressure Overload in Heterozygous Mice of Systemic Carnitine Deficiency(Cardiomyopathy, basic/clinical-4 (M) PE31,Poster Session (English),The 70th Anniversary Annual Scientific Meeting
- Upregulation of Renal eNOS by High-Sodium Diet Induced Oxidative Stress and Hypertension in Doxorubicin-Treated Rats (Hypertension, Basic 4(H), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- Pressure Overload-Induced Cardiomyopathy and Heart Failure in Heterozygous Carrier Mice of Carnitine Transporter Gene Mutation(Heart Failure, Basic 5 (M), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- Beneficial Effects of Non-Fat Diet on Lipotoxic Cardiomyopathy Due to Systemic Carnitine Deficiency(Cardiac Hypertrophy/Cardiomyopathy 1 (M), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- PE-497 Fenofibrate Activates AMP-activated Protein Kinase and Decreases Gluconeogenesis in the Liver(Diabetes/Obesity/Metabolic syndrome-08, The 71st Annual Scientific Meeting of the Japanese Circulation Society)
- PJ-561 Implantation of Adipose-Derived Stem Cells Induces Angiogenesis in Ischemic Tissue. Role of SDF-1-Mediated Endothelial Progenitor Cell Mobilization(Regeneration (angiogenesis/myocardial regeneration)(05)(M),Poster Session(Japanese),The 72nd Annual
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
- PE-431 Dietary Fish Oil Attenuates Cardiac Hypertrophy in a Murine Model of Systemic Carnitine Deficiency(Cardiomyopathy, Basic and Clinical 1 (M) : PE73)(Poster Session (English))
- PE-214 Beneficial Effects of Combined Therapy with PPARα Agonist and Carnitine Supplementation on the Hypertrophied Heart with Energy Metabolism Disorder.(Metabolism/Biochemistry/Energetics 1 (IHD) : PE37)(Poster Session (English))
- 27aB07 Growth of semi-insulating GaN layer with high Fe doping(NCCG-34)
- Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport
- Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy
- Effect of High NH
- High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H
- High Temperature Ramping Rate for GaAs (111)A Substrate Covered with a Thin GaN Buffer Layer for Thick GaN Growth at 1000°C
- Effect of High NH₃ Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates (Special Issue : Recent Advances in Nitride Semiconductors)
- Structural and Optical Properties of Carbon-Doped AIN Substrates Grown by Hydride Vapor Phase Epitaxy Using AIN Substrates Prepared by Physical Vapor Transport