Effect of High NH₃ Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates (Special Issue : Recent Advances in Nitride Semiconductors)

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The influence of the source gas supply sequence prior to growth and the NH<inf>3</inf>input partial pressure (P^{\text{o}}_{\text{NH3}}) on the nucleation of InN islands during the initial stages of hydride vapor phase epitaxy on a nitrided (0001) sapphire substrate was investigated. The crystalline quality of the InN layer after subsequent lateral growth was also examined. When NH<inf>3</inf>was flowed prior to growth, single-crystal hexagonal InN islands formed. When InN was grown with a higher P^{\text{o}}_{\text{NH3}}, the number of InN islands decreased remarkably while their diameter increased. The crystalline quality of InN grown on the hexagonal islands with a high P^{\text{o}}_{\text{NH3}} significantly improved with increasing growth time. A strong PL spectrum was observed only from InN layers grown with a high P^{\text{o}}_{\text{NH3}}. It was thus revealed that an NH<inf>3</inf>preflow and a high P^{\text{o}}_{\text{NH3}} are effective for producing InN with high crystalline quality and good optical and electrical properties.
2013-08-25