Method for Theoretical Prediction of Indium Composition in Coherently Grown InGaN Thin Films
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概要
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InxGa1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown InxGa1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition $x$ of coherently grown InxGa1-xN is lower than that of stress-free InGaN. This represents the composition pulling effect.
- The Japan Society of Applied Physicsの論文
- 2009-08-25
著者
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kakimoto Koichi
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
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Kangawa Yoshihiro
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
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Yayama Tomoe
Department of Aeronautics and Astronautics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Kangawa Yoshihiro
Department of Aeronautics and Astronautics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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