Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources

概要

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In this work, we developed a solution growth method that uses Li--Al--N solution to epitaxially grow AlN on a self-nucleated, columnar AlN seed crystal. The seed crystal was grown by physical vapor transport, and the solution was obtained by annealing a Li3N--Al mixture. The epitaxial AlN grew ${\sim}5$ μm in 10 h. Scanning electron microscopy analyses showed that the grown layer had many voids near the epilayer/seed interface, but no evidence of cracks. Using transmission electron microscopy analyses, we found that the growth direction of the AlN was [$1100$] and the layer had threading dislocation propagating along [$1100$] with a density of ${\sim}4\times 10^{8}$ cm-2.
2011-09-25